semiconductor optical amplifier

  • 释义

    半导体光放大器

数据更新时间:2026-08-21 22:55:34
1、

growth of 1.55 μ m polarization-insensitive semiconductor optical amplifier

1.55μm偏振不灵敏光放大器结构材料的生长

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2、

Analysis on the temporal properties of the output pulses for input pulses with different sharpness edges passing through a semiconductor optical amplifier

不同陡峭边沿的皮秒光脉冲经半导体光放大器后的时域特性分析

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3、

The main modulars are semiconductor optical amplifier ( SOA) based on cross gain compression that can perform wavelength conversion, synchronous and time delay modular, and optical time division multiplexer modular.

主要的模块是完成波长转换的基于交叉增益调制的半导体光放大器(SOA)、同步和延时及时分复用模块。

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4、

actively mode-locked fiber ring laser based on cross-gain modulation effect of semiconductor optical amplifier

基于半导体光放大器交叉增益调制效应的主动锁模光纤激光器

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5、

the wavelength conversion of 2.5 gbit/ s non return to zero optical pulse based on cross gain modulation in semiconductor optical amplifier is demonstrated.

采用半导体光放大器(SOA)的交叉增益调制进行了25Gbit/s的非归零码光脉冲的波长变换。

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6、

a model based on semiconductor optical amplifier ( soa) and nonlinear optical loop mirror ( nolm) is designed for amplification and compression of optical pulse.

设计了一种基于半导体光放大器(SOA)和非线性光学环镜(NOLM)的光脉冲放大与压缩的模型。

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7、

2Gbit/ s optical time-division multiplexing experiment using semiconductor laser amplifier as high speed optical switches

利用半导体激光放大器作为高速光调制开关的2Gbit/s光学时分复用实验

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8、

A novel scheme of optical power equalization based on Fabry-Perot semiconductor optical amplifier ( FP-SOA) is proposed.

本文针对光分组交换中的光功率波动问题,提出了一种利用FP-SOA光功率均衡的方案。

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9、

The stable 1.3μ m InGaAsP travelling-wave semiconductor optical Amplifier ( TW-SOA ) module is demonstrated in this paper.

报道一种具有稳定封装结构的1.3μmInGaAsP行波半导体光放大器.

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10、

Nonlinear Application of Semiconductor Optical Amplifier in Optical Fiber Communication

半导体光放大器非线性特性在光纤通信中的应用

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11、

In this pager, the self-phase modulation effect in gain saturated semiconductor optical amplifier and its affect on the shape, phase and spectrum of transmission pulse are analyzed.

本文分析了半导体激光放大器处于增益饱和状态下的自相位调制(SPM)效应,以及SPM效应对传输脉冲波形、相位及频谱的影响。

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13、

with the improving of vertical cavity devices, a kind of semiconductor optical amplifier based on vertical micro fabry-perot resonant cavity, vertical cavity semiconductor optical amplifier ( vcsoa), are proposed and widely developed in recent years.

随着垂直腔光电器件的发展,一种基于垂直微型Fabry-Perot谐振腔结构的半导体光放大器&垂直腔半导体光放大器(VCSOA)被提出,并在近几年来迅速发展。

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14、

the efficient cavity length of vertical cavity semiconductor optical amplifier ( vcsoa) is calculated with the theory of phase penetrating.

同时,利用相位渗透理论,数值计算了垂直腔半导体光放大器(VCSOA)中的有效腔长。

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15、

ternary ingaas bulk layer is used as active region. tm mode gain is enhanced by directly introducing 0.20% tensile strain into bulk ingaas active layer so that a polarization insensitive semiconductor optical amplifier ( soa) for converter is fabricated.

采用三元InGaAs体材料为有源区,通过直接在InGaAs体材料中引入020%张应变来加强TM模的增益,研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA)。

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16、

a 1.55 μ m polarization-insensitive semiconductor optical amplifier ( soa) was fabricated with the active region of ingaas tensile-strained bulk material.

研制了有源区为InGaAs张应变体材料的1.55μm偏振不灵敏半导体光放大器(SOA)。

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17、

Self-phase Modulation in Gain Saturated Semiconductor Optical Amplifier

增益饱和半导体激光放大器中的自相位调制效应

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